This condition is sometimes not a problem in the case of the more negative of the two FETs in a totem pole pair, but usually the supply voltage connected to the positive-side FET is the most positive voltage available in the system. but they require a control voltage which is more positive than the positive supply to be switched. N-Channel devices are preferable to P-Channel types in terms of cost, breakdown voltage, and efficiency. Power FETs that are suited to the applications addressed herein are available as either N-channel or P-channel types. Such "totem pole" configurations of FETs are commonly used in high voltage and/or high current switching applications, such as in driving high voltage PIN diodes, controlling motors with "full-bridge" drivers, piezoelectric actuator drivers, and DC-DC power converters, among other uses. This invention relates to electronic circuits involving "totem pole" connected Field-Effect Transistors (FETs) or Insulated-Gate Bipolar Transistors (IGBTs).Ĭonnecting two FETs in series between two voltages allows the center connection to be switched to either supply voltage, provided that appropriate control voltages are connected to the gates of the two FETs.
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